Characterization of low index Si waveguides

B. Barua, S. Majumder, A. Melloni
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引用次数: 2

Abstract

In recent years, silicon photonics has attracted attention as an emerging technology for optical telecommunications and for optical interconnects in microelectronics. The refractive index contrast plays a fundamental role in determining the characteristics of an optical dielectric waveguide and a higher index contrast permits to move towards larger scales of integration and to access new devices and functionalities. But high contrast waveguides are more difficult to realize and more critical but there are no serious impediments in their use. The aim of this contribution is to investigate the dependence of the waveguide characteristics with respect to the index contrast and explore the difficulties. In this paper, the impact of the index contrast on the characteristics of dielectric waveguides such as single mode regime, losses, fiber to waveguide coupling, technological constraints and available materials are investigated. The investigation shows that the dependence of the sensitivity in optical waveguide sensors on the polarization of guided modes is less in small refractive index difference waveguide compare than the silicon on silica waveguides but it provide flexibility to the design engineers.
低折射率硅波导的特性
近年来,硅光子学作为一种新兴的光通信技术和微电子领域的光互连技术受到了广泛的关注。折射率对比在决定光介质波导的特性中起着基本的作用,较高的折射率对比允许向更大的集成规模移动,并获得新的设备和功能。但高对比度波导的实现难度更大,也更关键,但在使用上没有严重的障碍。本贡献的目的是研究波导特性对折射率对比度的依赖关系,并探讨困难。本文研究了折射率对比对介质波导单模态、损耗、光纤与波导耦合、技术限制和可用材料等特性的影响。研究表明,在小折射率差波导中,光波导传感器的灵敏度对导模偏振的依赖性比硅上硅小,但它为设计工程师提供了灵活性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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