{"title":"A reliable MTD design for MLC flash-memory storage systems","authors":"Yuan-Hao Chang, Tei-Wei Kuo","doi":"10.1145/1879021.1879045","DOIUrl":null,"url":null,"abstract":"The reliability of flash-memory chips has dropped dramatically in recent years. In order to solve this problem, a reliable memory technology device (MTD) design is proposed to address this concern at the device driver layer so as to release the design complexity of flash-memory management software/firmware and to improve the maintainability and portability of flash management designs for existing and future products. The proposed design was evaluated through a series of experiments based on realistic traces to show that the proposed approach could significantly improve the reliability of flash memory with limited overheads.","PeriodicalId":143573,"journal":{"name":"International Conference on Embedded Software","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Embedded Software","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1879021.1879045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
The reliability of flash-memory chips has dropped dramatically in recent years. In order to solve this problem, a reliable memory technology device (MTD) design is proposed to address this concern at the device driver layer so as to release the design complexity of flash-memory management software/firmware and to improve the maintainability and portability of flash management designs for existing and future products. The proposed design was evaluated through a series of experiments based on realistic traces to show that the proposed approach could significantly improve the reliability of flash memory with limited overheads.