Complete characterisation of LF and RF dynamics at device terminals within microwave circuits

G. Avolio, D. Schreurs, B. Nauwelaers, G. Pailloncy, M. Bossche
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引用次数: 2

Abstract

This work presents a way to determine the complete response, encompassing both the low- and high-frequency components, at the device terminals within a microwave circuit. The measurement set-up is based on an extension of the large-signal network analyser. Experimental results on a GaAs power amplifier are analysed.
对微波电路中设备终端的低频和射频动态进行全面鉴定
这项研究提出了一种方法,用于确定微波电路中器件终端的完整响应,包括低频和高频成分。测量装置基于大信号网络分析仪的扩展。对砷化镓功率放大器的实验结果进行了分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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