Modeling and implementation of a fully-digital integrated per-core voltage regulation system in a 28nm high performance 64-bit processor

R. Rachala, Miguel Rodriguez, S. Kosonocky, Milos Trajkovic
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引用次数: 1

Abstract

This paper describes modeling and implementation of a fully digital integrated linear voltage regulation system implemented in a 28nm x86-64 core to reduce power gating entry or exit latency. Running on a 100 MHz clock, the controller samples voltage using a time-to-digital converter, and controls a set of PFETs organized in a ring topology around the CPU cores to drop voltage down to a specified target value. A simple analytical model is developed and validated through fast Matlab-Simulink simulation, enabling quick design turnaround and reducing schedule impact. The regulation system is designed to support input-output voltages in the range 1.3 V - 0.55 V. Digitally-controlled header resistance values range from 1.5 Ω to 2 mΩ. Stable processor behavior is observed down to 0.6 V, enabling fast pseudo-power gating entry and exit. In a high-performance x86-64 dual-core microprocessor chip, the controller enables an effective 6% frequency increase for lightly threaded applications by increasing the boost state residency.
在28nm高性能64位处理器上的全数字集成单核电压调节系统的建模和实现
本文描述了在28nm x86-64内核中实现的全数字集成线性电压调节系统的建模和实现,以减少功率门控进入或退出延迟。在100mhz时钟上运行,控制器使用时间-数字转换器对电压进行采样,并控制一组围绕CPU内核以环形拓扑结构组织的pfet,以将电压降至指定的目标值。通过快速Matlab-Simulink仿真,开发并验证了一个简单的分析模型,从而实现快速设计周转并减少进度影响。调节系统的设计支持输入输出电压范围在1.3 V - 0.55 V。数字控制头电阻值范围从1.5 Ω到2 mΩ。稳定的处理器行为被观察到低至0.6 V,使快速伪功率门控进入和退出。在高性能x86-64双核微处理器芯片中,该控制器通过增加升压状态驻留,使轻线程应用的频率有效提高6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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