Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz

Proceedings of the 4th ACM International Conference on Nanoscale Computing and Communication Pub Date : 2017-09-27 DOI:10.1145/3109453.3122842

Pedro Rodríguez-Vázquez, J. Grzyb, N. Sarmah, U. Pfeiffer, B. Heinemann

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引用次数: 4

Abstract

This paper presents a fully-integrated direct-conversion quadrature transmitter and receiver implemented in a SiGe HBT technology with fT/fmax=350/550 GHz working at a carrier frequency of 240 GHz. The transmitter has a 3-dB RF/LO bandwidth of 35 GHz with a peak output power of 8.5 dBm, while the receiver presents 22 GHz of RF/LO 3-dB bandwidth with peak conversion gain of 21 dB and a single side band (SSB) noise figure of 9.5 dB. Each of the modules is implemented in a single silicon chip, including a broadband silicon lens-integrated on-chip antenna, and assembled on a low-cost high-speed PCB with a recess to accommodate the chip and wire-bonding compensation structures. This results in an IF bandwidth of 13 GHz at the board-connector level. The preliminary wireless-link test for a distance of 1 m has demonstrated data-rates of 30 Gbps with an EVM of 26% and 50 Gbps with an EVM of 29% for BPSK and QPSK modulation respectively, without applying any channel equalization or error correction techniques.

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迈向太赫兹高数据速率通信:240ghz 50gbps全电子无线链路

本文提出了一种采用SiGe HBT技术实现的完全集成的直接转换正交发射机和接收机，fT/fmax=350/550 GHz，工作在240 GHz载波频率下。发射器的3db RF/LO带宽为35 GHz，峰值输出功率为8.5 dBm;接收器的3db RF/LO带宽为22 GHz，峰值转换增益为21 dB，单边带(SSB)噪声系数为9.5 dB。每个模块都在单个硅芯片中实现，包括一个宽带硅透镜集成的片上天线，并组装在低成本的高速PCB上，其中有凹槽以容纳芯片和线键合补偿结构。这导致在板连接器级的中频带宽为13ghz。1米距离的初步无线链路测试表明，BPSK和QPSK调制的数据速率分别为30 Gbps和26% EVM, 50 Gbps和29% EVM，无需应用任何信道均衡或纠错技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 4th ACM International Conference on Nanoscale Computing and Communication

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