Yulu Chen, B. Wang, Chuansheng Zhang, Liwei Hou, M. Pan, Xiaodong Wang
{"title":"Responsivity properties of GaAs based Blocked-Impurity-Band detectors","authors":"Yulu Chen, B. Wang, Chuansheng Zhang, Liwei Hou, M. Pan, Xiaodong Wang","doi":"10.1109/ICAM.2017.8242162","DOIUrl":null,"url":null,"abstract":"GaAs-based Blocked-Impurity-Band (BIB) detector, as a potential high-sensitive, low noise Terahertz (THz) detector, has been developed for the broad application in the area of THz security check and astronomy mission. In this work, GaAs:Si and GaAs:Te BIB detectors were fabricated. Their responsivity properties were measured at T=3.5K, under different biases and the same black body temperature of 1000K. The experimental results reveal that the GaAs:Si BIB device has a higher responsivity of 66 mA/W (Vbias=1V), about 5 times higher than that of GaAs:Te BIB device. This work demonstrates Si as a suitable choice of doping element for the absorption layer of GaAs based BIB detectors.","PeriodicalId":117801,"journal":{"name":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2017.8242162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
GaAs-based Blocked-Impurity-Band (BIB) detector, as a potential high-sensitive, low noise Terahertz (THz) detector, has been developed for the broad application in the area of THz security check and astronomy mission. In this work, GaAs:Si and GaAs:Te BIB detectors were fabricated. Their responsivity properties were measured at T=3.5K, under different biases and the same black body temperature of 1000K. The experimental results reveal that the GaAs:Si BIB device has a higher responsivity of 66 mA/W (Vbias=1V), about 5 times higher than that of GaAs:Te BIB device. This work demonstrates Si as a suitable choice of doping element for the absorption layer of GaAs based BIB detectors.