Fabrication and characteristics of high speed implant-confined, index-guided, lateral-current, 850 nm vertical cavity surface emitting lasers

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004048

G. Dang, R. Mehandru, B. Luo, F. Ren, W. Hobson, J. Lopata, M. Tayahi, S. Chu, S. Pearton, W. Chang, H. Shen

引用次数: 15

Abstract

Process technology of high-speed implant-apertured, index-guide, lateral-current-injection, dielectric-mirror GaAs quantum well vertical cavity surface emitting lasers has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, were investigated. GaAs/AlGaAs based 850 nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence (PRBS) of 231-1 were achieved. The with bit-error rates were below 10-13. The threshold current is as low as 0.8 mA for 7 mm diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW are obtained for output mirror reflectivity of 99.5%.

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高速注入受限、折射率导向、横向电流、850 nm垂直腔面发射激光器的制备与特性

发展了高速注入孔径、折射率导向、侧向注入电流、介电镜GaAs量子阱垂直腔面发射激光器的工艺技术。研究了氧气和氦气注入对孔径定义和外部电容减小、介电镜形成、p欧姆和n欧姆接触形成的影响。基于GaAs/AlGaAs的850 nm vcsel具有高达11.5 Gb/s的小信号调制带宽，并实现了由231-1伪随机比特序列(PRBS)以12 Gb/s的速度生成的眼图。误码率在10 ~ 13之间。对于直径为7mm的电流孔，阈值电流低至0.8 mA，输出反射镜反射率为99.5%，斜率效率为0.45-0.5 mA/mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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