Electromagnetic interference by high power microwaves

G. V. Rao, A. Roy, A.S. Paithankar, P. Ron
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引用次数: 4

Abstract

High power microwave (HPM) radiation with frequency>1 GHz may penetrate electronic systems through front or backdoor openings and propagate like the genuine signal. Sometimes parasitic resonance may amplify the HPM signal and cause havoc to these systems. The surface currents caused by HPM can also interfere with the normal signals and upset the functioning of devices. The HPM incident upon electronic components may damage them through mechanisms like adiabatic heating of the junction or punch-through of the depletion layer. High power microwave radiation generation studies were performed using the intense electron beam from the KALI-1000 Pulse Accelerator by the virtual cathode oscillator method. Various axial resonant cavities were used to optimise the microwave emission. A maximum power of 500 MW around 5 GHz was generated by using an axial resonant cavity with a resonant frequency of 5 GHz. The HPM was also used to study the effects on some electronic devices. The HPM caused damage to the op-amps and stopped the functioning of the personal computers. The HPM can also cause breakdown in the low-pressure devices like hydrogen thyratrons and cause spurious triggering in the control circuits that use them.
高功率微波的电磁干扰
频率> 1ghz的高功率微波(HPM)辐射可以穿过电子系统的前门或后门,并像真实信号一样传播。有时寄生共振会放大HPM信号,对这些系统造成破坏。HPM产生的表面电流也会干扰正常信号,扰乱设备的功能。HPM作用在电子元件上可能会通过结的绝热加热或损耗层的击穿等机制对电子元件造成损坏。利用KALI-1000脉冲加速器产生的强电子束,采用虚拟阴极振荡器方法进行了高功率微波辐射的研究。采用不同的轴向谐振腔对微波发射进行优化。采用谐振频率为5 GHz的轴向谐振腔,在5 GHz左右产生了500 MW的最大功率。HPM还被用于研究对某些电子设备的影响。HPM损坏了运放,使个人电脑无法正常工作。HPM还会导致氢闸流管等低压设备击穿,并在使用它们的控制电路中引起误触发。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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