Characterization of p-type PbEuTe/PbTe MQW structures with high thermoelectric figures of merit in the PbTe quantum wells

T. Harman, D. Spears, D. Calawa, S. Groves, M. P. Walsh
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引用次数: 8

Abstract

A large enhancement in the Seebeck coefficient, thermoelectric power factor and figure of merit (Z/sub 2D/T) is reported in very high carrier concentration p-type PbTe quantum wells grown by molecular beam epitaxy. The estimated Z/sub 2D/T (using accepted bulk values for lattice thermal conductivity) is as high as 1.5 at 300 K. Power factor values up to 160 /sub /spl mu//Wcm/sup -1/K/sup -2/ were measured at 300 K, indicating a power factor in p-type quantum wells that is approximately five times the best bulk or homogeneous p-type value. Thinner barriers yielded lower thermoelectric power factors and figures of merit. The high power factor was achieved with a barrier thickness less than half that previously used to demonstrate enhanced thermoelectric power factors in n-type quantum wells. X-ray diffraction/reflection characterization results of the multiple-quantum-well (MQW) structures at both low and high Bragg angles yield precise values for the MQW periodicity.
PbTe量子阱中具有高热电性能的p型PbEuTe/PbTe MQW结构的表征
据报道,在分子束外延生长的载流子浓度很高的p型PbTe量子阱中,塞贝克系数、热电功率因数和优值系数(Z/sub 2D/T)有了很大的提高。估计的Z/sub 2D/T(使用公认的晶格热导率的体积值)在300 K时高达1.5。在300 K下测得的功率因数值高达160 /sub /spl mu//Wcm/sup -1/K/sup -2/,表明p型量子阱的功率因数约为最佳体或均匀p型值的五倍。更薄的屏障产生了更低的热电功率因数和优点数字。实现高功率因数时,势垒厚度不到以前用于证明n型量子阱中增强热电功率因数的一半。多量子阱(MQW)结构在低布拉格角和高布拉格角下的x射线衍射/反射表征结果得出了MQW周期性的精确值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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