A new extraction method for BSIM3v3 model parameters of RF silicon MOSFETs

Abstract

A new parameter extraction technique utilizing S-parameter data at the GHz range is proposed for a SPICE BSIM3v3 model of an RF MOSFET. The extraction of capacitance parameters is carried out using S-parameter sets measured under specific bias conditions for various device sizes. The resistances (R/sub g/, R/sub d/) and inductances are obtained by fitting the frequency responses of Z-parameter equations, and source and substrate resistances are determined using S-parameter optimization. Good correspondence is observed between measured and modeled S-parameters up to 12 GHz.