Effect of Ar pressure on the magnetic properties of Fe-Si/sub 3/N/sub 4/ thin film prepared by Co-sputtering

Y. Yoo, Seong-cho Yu, C. Kim, W. Lim
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Abstract

Fe and Co-based thm films with amorphous stmcture [I] or nanoaystallme phase [2], whlch exhibit good soft magnehc properties up to 10 MHz, were developed. However, with a further demand for the miniaturization of elecfmmagmtic devices, active research is now under way to develop thin films exhibiting good soft magnetic properties up to 100 MHZ or GHz For applicabon granular films consisting of metallic magnetic grains surrounded by an intergranular phase with high elecmcal resistivity in order to reduce the eddy current loss are of great interest[3]. In this shldy we are reporting the effect of Ar pressure on the soft magnebc properties of Fe-SilNn thm films prepared by co-sputtcring technique
Ar压力对共溅射制备Fe-Si/sub - 3/N/sub - 4薄膜磁性能的影响
开发了具有非晶结构[I]或纳米晶相[2]的Fe和co基薄膜,其软磁性能高达10 MHz。然而,随着对电磁器件小型化的进一步需求,目前正在积极研究开发具有高达100 MHZ或GHz的良好软磁性能的薄膜。应用于由金属磁性颗粒组成的颗粒膜,其周围是具有高电阻率的晶间相,以减少涡流损耗是非常有趣的[3]。本文报道了氩气压力对共溅射法制备的Fe-SilNn薄膜软磁性能的影响
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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