An adaptively biased low-dropout regulator with transient enhancement

Chenchang Zhan, W. Ki
{"title":"An adaptively biased low-dropout regulator with transient enhancement","authors":"Chenchang Zhan, W. Ki","doi":"10.1109/ASPDAC.2011.5722166","DOIUrl":null,"url":null,"abstract":"An output-capacitor-free adaptively biased low-dropout regulator with transient enhancement (ABTE LDR) is proposed. Techniques of Q-reduction compensation, adaptive biasing, and transient enhancement achieve low-voltage high-precision regulation with low quiescent current consumption while significantly improving the line and load transient responses and power supply rejections. The features of the ABTE LDR are experimentally verified by a 0.35-μm CMOS prototype.","PeriodicalId":316253,"journal":{"name":"16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.2011.5722166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

An output-capacitor-free adaptively biased low-dropout regulator with transient enhancement (ABTE LDR) is proposed. Techniques of Q-reduction compensation, adaptive biasing, and transient enhancement achieve low-voltage high-precision regulation with low quiescent current consumption while significantly improving the line and load transient responses and power supply rejections. The features of the ABTE LDR are experimentally verified by a 0.35-μm CMOS prototype.
一种具有瞬态增强的自适应偏置低差调节器
提出了一种无输出电容的暂态增强自适应偏置低差稳压器(ABTE LDR)。降q补偿、自适应偏置和瞬态增强技术实现了低静态电流消耗的低压高精度调节,同时显著改善了线路和负载的瞬态响应和电源抑制。在0.35 μm CMOS样机上验证了ABTE LDR的特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信