The Wideband Balun-LNA in 130 nm SiGe Technology

Abstract

A circuit of balun-LNA designed in 130 nm SiGe BiCMOS technology is presented. The balun-LNA has been designed using common base (CB) and common emitter (CE) stages based on heterojunction bipolar transistor (HBT). The balun-LNA circuit are used for amplification of radio frequency (RF) input signal and creation differential output signals using for double-balanced mixer (DBM). The obtained results of modeling of balun-LNA over 0.8-18 GHz frequency band are as follow: gain is more than 14 dB; NF is better than 5.0 dB, phase error of differential output signal is no more than 27 degree; VSWR is better than 1.7; required area size is $1.73 \times 0.73\ \mathbf{mm}^{2}$.