Radiation hardness of pseudomorphic HEMT and dual-gate GaAs MES-FET MMICs

Abstract

The effects of Co-60 /spl gamma/-ray irradiation under DC operation for two types of monolithic microwave integrated circuits (MMICs), Pseudomorphic HEMT (PHEMT) and Dual-Gate GaAs MES-FET, were investigated. These two types of MMICs have an excellent radiation hardness exceeding 10/sup 7/ rad(Si). We considered that degradation mechanisms of P-HEMT and MES-FET were the decrease of two dimensional electron gas (2DEG) carrier density and increase of electron traps near the Schottky gate electrode.