Radiation hardness of pseudomorphic HEMT and dual-gate GaAs MES-FET MMICs

K. Matsuzaki, N. Nemoto, E. Nakamura, T. Akutsu, S. Matsuda, K. Yajima, H. Sasaki, M. Komaru, T. Katoh, T. Kashiwa, T. Asano, K. Mizuguchi
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引用次数: 6

Abstract

The effects of Co-60 /spl gamma/-ray irradiation under DC operation for two types of monolithic microwave integrated circuits (MMICs), Pseudomorphic HEMT (PHEMT) and Dual-Gate GaAs MES-FET, were investigated. These two types of MMICs have an excellent radiation hardness exceeding 10/sup 7/ rad(Si). We considered that degradation mechanisms of P-HEMT and MES-FET were the decrease of two dimensional electron gas (2DEG) carrier density and increase of electron traps near the Schottky gate electrode.
伪晶HEMT和双栅GaAs MES-FET mmic的辐射硬度
研究了Co-60 /spl γ射线辐照对两种单片微波集成电路(mmic)伪晶HEMT (PHEMT)和双栅GaAs MES-FET的影响。这两种类型的mmic具有优异的辐射硬度,超过10/sup / rad(Si)。我们认为P-HEMT和MES-FET的降解机制是二维电子气体(2DEG)载流子密度的降低和肖特基栅电极附近电子陷阱的增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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