Parameter Characterization of Power MOSFET Gate Oxide Degradation Based on Current Falling Time during Turn-off Process

Abstract

Power MOSFET is an indispensable key component in circuits and electronic systems. For power MOSFET, gate oxide degradation often occurs in various applications, so the research on gate oxide degradation has important theoretical significance for the reliability evaluation of electronic components. This paper proposes a power MOSFET gate oxide degradation parameter characterization technique based on the current fall time (tfi) during the turn-off process. Firstly, it introduces the failure mechanism and effects of gate oxide degradation of power MOSFET; secondly, analyzes the mechanism of gate oxide degradation based on the current drop time during turn-off; finally, an accelerated gate oxide degradation experiment was taken, and the results proved that the current fall time can effectively characterize the degradation state of the gate oxide layer of the power MOSFET, and verified the effectiveness of the proposed parameter characterization technique.