MI-SISL Based 5G High-Efficiency Power Amplifier (invited)

Abstract

This paper gives a brief introduction of the proposed metal-integrated and substrate integrated suspended line (MI-SISL) technology, which is demonstrated as an attractive plat-form for high power and high-efficiency power amplifier integration with superiorities of high-performance and self-packaging and two MI-SISL based high power and high-efficiency power amplifiers (PAs) for 5G applications are introduced as the demonstration cases.