Structural and Optical Properties of Zinc Doped CdS Thin Films Prepared at Bath Temperature 80ºC by Chemical Bath Deposition Technique

U. Karunanith, S. Prabahar, S. Srikanth, R. Karunakaran
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Abstract

In this paper, different aspects and facts concerned with the synthesis of thin films of lead chalcogenides along with its opto-electro-structural properties is presented. The polycrystalline thin films were put onto chemically clean and optically plane glass substrates by chemical bath deposition technique from aqueous solutions of Cadmium chloride, Zinc acetate, thiourea, triethanolamine and ammonia. X-ray diffraction analysis has been used for the structural characterization. It indicates that the crystallized layers are cubic in form. By using Scherrer’s formula and the data obtained from the XRD studies,the grain size was calculated as 16.5 nm. The band gap energy estimated for Zincdoped CdS thin films is 2.95 eV.
80℃下化学浴沉积法制备锌掺杂CdS薄膜的结构和光学性质
本文介绍了有关硫族铅薄膜合成的不同方面和事实及其光电结构性质。以氯化镉、醋酸锌、硫脲、三乙醇胺和氨为溶剂,采用化学浴沉积技术在化学清洁的光学平面玻璃衬底上制备了多晶薄膜。x射线衍射分析用于结构表征。结果表明结晶层呈立方状。根据Scherrer公式和XRD研究数据,计算出该材料的晶粒尺寸为16.5 nm。锌掺杂CdS薄膜的带隙能估计为2.95 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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