Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs

Abstract

A new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate. Simulation results are presented by focusing on the physical and geometrical parameters of the P-GaN wells. The normally-off behavior of the novel HEMT is demonstrated.