Reverse-recovery safe operating area of diodes in power integrated circuits

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229024

P. Hower, Ç. Kaya, S. Pendharkar, C. Jones

引用次数: 2

Abstract

Failure during reverse recovery of an IC power diode is examined. It is shown how one-dimensional diode behavior together with mixed-mode tcad can be used to predict safe operating conditions for the actual two-dimensional case.

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功率集成电路中二极管的反向恢复安全工作区域

故障期间反向恢复的IC功率二极管进行了检查。它显示了如何将一维二极管行为与混合模式tcad一起用于预测实际二维情况下的安全操作条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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