MBE growth of InP using polycrystalline InP as phosphorus source

International Conference on Indium Phosphide and Related Materials Pub Date : 1990-04-23 DOI:10.1109/ICIPRM.1990.203001

B.X. Yang, H. Ishii, K. Iizuka, H. Hasegawa, H. Ohno

引用次数: 2

Abstract

The feasibility of molecular-beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) growth of InP in the standard GaAs-type MBE chamber was demonstrated using polycrystalline InP as the phosphorus source. The substrate was a semi-insulating (Fe-doped) InP substrate with

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以多晶InP为磷源的MBE生长

以多晶InP为磷源，证明了在标准gaas型MBE腔中进行InP分子束外延(MBE)和迁移增强外延(MEE)生长的可行性。衬底为半绝缘(掺铁)InP衬底

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Conference on Indium Phosphide and Related Materials

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