Electrodeposit Formation in Solid Electrolytes

M. Kozicki, C. Ratnakumar, M. Mitkova
{"title":"Electrodeposit Formation in Solid Electrolytes","authors":"M. Kozicki, C. Ratnakumar, M. Mitkova","doi":"10.1109/NVMT.2006.378888","DOIUrl":null,"url":null,"abstract":"Devices based on polarity-dependent switching in solid electrolytes show great promise as next generation memory and perhaps even logic devices. These elements operate by the formation of robust but reversible electrodeposited conducting pathways which can be grown and dissolved at low voltage and current. Although such devices have been well characterized, little has been presented on the exact growth mechanism and nature of the conducting links themselves. In this paper we will show and discuss examples of electrodeposition within ternary silver-chalcogenide electrolyte device structures. The electrolyte was sectioned using focused ion beam milling and imaged with an in-situ scanning electron microscope to reveal the profile of the structure. A variety of Ag electrodeposits were imaged in overwritten devices and it was clear that programming times in the order of a few seconds will create multiple deposits on the inert cathode, some of which appear to extend through to the anode. The electron beam itself was also used to reduce silver ions within the electrolyte to reveal how the electrodeposits might nucleate on the Ag-rich phases within the film.","PeriodicalId":263387,"journal":{"name":"2006 7th Annual Non-Volatile Memory Technology Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 7th Annual Non-Volatile Memory Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMT.2006.378888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

Abstract

Devices based on polarity-dependent switching in solid electrolytes show great promise as next generation memory and perhaps even logic devices. These elements operate by the formation of robust but reversible electrodeposited conducting pathways which can be grown and dissolved at low voltage and current. Although such devices have been well characterized, little has been presented on the exact growth mechanism and nature of the conducting links themselves. In this paper we will show and discuss examples of electrodeposition within ternary silver-chalcogenide electrolyte device structures. The electrolyte was sectioned using focused ion beam milling and imaged with an in-situ scanning electron microscope to reveal the profile of the structure. A variety of Ag electrodeposits were imaged in overwritten devices and it was clear that programming times in the order of a few seconds will create multiple deposits on the inert cathode, some of which appear to extend through to the anode. The electron beam itself was also used to reduce silver ions within the electrolyte to reveal how the electrodeposits might nucleate on the Ag-rich phases within the film.
固体电解质中电沉积的形成
基于固态电解质中极性依赖开关的器件显示出作为下一代存储器甚至逻辑器件的巨大前景。这些元件通过形成坚固但可逆的电沉积导电通道来工作,这些通道可以在低电压和低电流下生长和溶解。虽然这种装置已经很好地表征了,但很少有关于导电环节本身的确切生长机制和性质的介绍。在本文中,我们将展示和讨论在三元银硫系电解质器件结构中电沉积的例子。利用聚焦离子束铣削对电解液进行了切片,并用原位扫描电镜对其进行了成像,揭示了电解质的结构轮廓。在覆盖设备中对各种Ag电沉积进行了成像,很明显,以几秒钟为顺序的编程时间将在惰性阴极上产生多个沉积,其中一些似乎延伸到阳极。电子束本身也被用来还原电解质中的银离子,以揭示电沉积如何在膜内富银相上成核。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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