Laser-induced etching

C. Ashby
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引用次数: 2

Abstract

There are three categories of laser-assisted chemical reactions which have been employed to etch metals, semiconductors, and other inorganic materials. Lasers can be used to locally heat a solid to accelerate the rate of a thermally activated process. This is the most universally applicable method of laser-induced etching. Alternatively, the laser can be used to generate reactive gas-phase or liquid-phase species by photolytic decomposition of precursor molecules. Appropriate reactants have been identified for a wide variety of materials. Finally, the laser can be used to create photo-generated electrons and holes in semiconductors; these carriers then participate directly in the etching process. Highly selective etching can be achieved by capitalizing on the surface electronic properties which influence carrier generation or subsequent behavior. These three types of laser-induced reaction are reviewed.
激光蚀刻
有三种类型的激光辅助化学反应已被用于蚀刻金属、半导体和其他无机材料。激光可用于局部加热固体,以加快热激活过程的速率。这是最普遍适用的激光诱导蚀刻方法。或者,激光可以通过前体分子的光解分解来产生反应性气相或液相物质。对于各种各样的材料,已经确定了合适的反应物。最后,激光可用于在半导体中产生光生电子和空穴;然后这些载流子直接参与蚀刻过程。通过利用影响载流子产生或后续行为的表面电子特性,可以实现高度选择性的蚀刻。对这三种激光诱导反应进行了综述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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