MBE growth of GaN

Abstract

GaN has been grown by MBE at growth rates up to 1 /spl mu/m/hr and at temperatures up to 1000 C using a new rf nitrogen plasma source developed by EPI Inc. The EPI source employs a pyrolytic boron nitride plasma reaction chamber that eliminates gas leakage. This "unibulb" construction gives rise to higher pressures and longer confinement times within the reaction chamber. Optical IR emission spectra show that the nitrogen plasma is very rich in nitrogen atoms.