A 1.2 V 3.1–10.6 GHz CMOS low noise amplifier with 24 dB gain and 2.4 dB noise figure

Sun Limei
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引用次数: 6

Abstract

This paper presents a 3.1–10.6 GHz low noise amplifier (LNA) for ultra-wideband (UWB) applications. The proposed wideband amplifier comprises a single-ended resistor feedback LNA with wideband input matching and a single-to-differential voltage buffer which improves the power gain of the amplifier. The LNA achieves a 23.2 dB voltage gain and input return loss below −13 dB from 3.1–10.6 GHz, 2.4 dB and 2.7 dB minimum and maximum noise figure (NF), and −11.9 dBm IIP3 at 6 GHz. The proposed LNA is realized in 0.13 μm CMOS technology and occupies 0.32 mm2 area. The power consumption is 12.2 mW with 1.2 V supply.
1.2 V 3.1-10.6 GHz CMOS低噪声放大器,增益24 dB,噪声系数2.4 dB
本文提出了一种3.1-10.6 GHz的超低噪声放大器,用于超宽带(UWB)应用。所提出的宽带放大器包括具有宽带输入匹配的单端电阻反馈LNA和提高放大器功率增益的单对差分电压缓冲器。在3.1-10.6 GHz频段,LNA的电压增益为23.2 dB,输入回波损耗低于- 13 dB,最小和最大噪声系数(NF)分别为2.4 dB和2.7 dB, 6ghz频段的IIP3为- 11.9 dBm。LNA采用0.13 μm CMOS工艺实现,占地0.32 mm2。功耗为12.2 mW,电源为1.2 V。
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