Modeling of Quad-Parallel Bipolar Transistors in the 300 GHz Band

Abstract

In this study, we develop a model of quad-parallel bipolar transistors for the 300-GHz band in 0.13 µm SiGe BiCMOS technology. We also propose a simple modeling method for a bias-variable macro model. A four-stage power amplifier in the 300-GHz band is fabricated to validate the created model, and it is shown that simulation results using the created model agrees well with the measured results.