Experimental characteristics of GaAs-harmonic generators of mm-band

Abstract

Experimental samples of Gunn-diodes had m-n/sup +/-n-n/sup +/-m pattern and were made on the base of epitaxial films of n-GaAs, on low-impedance n/sup +/-substrate with given impurity concentration. The Gunn-diodes with given lengths of active n-area were made. Length of n-area was selected from an operation condition of the diode in transient-time mode on a base frequency. The Gunn-diodes, designed and manufactured in such a way, had a packageless design.