A 94 GHz monolithic downconverter in a MESFET technology

Abstract

A fully monolithic GaAs-94 GHz downconverter consisting of a single balanced diode mixer and a two-stage IF amplifier has been fabricated in a MESFET technology on a single chip. A conversion gain of 14.5 dB combined with a double-sideband noise figure of 6.5 dB has been achieved at 94 GHz. The reported results have been obtained in a one-pass design and show the validity of the design method, using technology based Schottky diode equivalent circuit and harmonic balanced analysis, and they also prove the maturity of the technology for millimeter-wave applications.<>