Silicon photonic microelectromechanical systems add-drop ring resonator in a foundry process

H. Sattari, A. Takabayashi, Pierre Edinger, P. Verheyen, K. Gylfason, W. Bogaerts, N. Quack
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引用次数: 1

Abstract

Abstract. Photonic add-drop filters are crucial components for the implementation of wavelength division multiplexing (WDM) in fiber-optic communication systems. The recent progress in photonic integration has shown the potential to integrate photonic add-drop filters alongside high-performance photonic building blocks on a chip to construct compact and complex photonic-integrated circuits for WDM. Typically, implementations are based on micro-ring resonators with integrated heaters or free carrier dispersion-based modulators to adjust the filter wavelength. However, heaters suffer from high power consumption, and free carriers result in optical absorption losses, limiting the scalability toward very-large-scale circuits. We demonstrate the design, simulation, fabrication, and experimental characterization of a compact add-drop filter based on a vertically movable, MEMS-actuated ring resonator. The MEMS-actuated add-drop filter is implemented in IMEC’s iSiPP50G silicon photonics platform and realized using a short post-processing flow to safely release the suspended MEMS structures in a wafer-level compatible process. The filter exhibits a through port linewidth of ∼1  nm (124.37 GHz) at 1557.1 nm, and it retains a port extinction of 20 dB and a port isolation of >50  dB under 27 V of actuation voltage. The combination of low-power consumption and a compact footprint demonstrates the suitability for very-large-scale integration in photonic circuits.
硅光子微机电系统在铸造工艺中添加了跌落环谐振器
摘要光子加降滤波器是光通信系统中实现波分复用(WDM)的关键器件。光子集成的最新进展表明,将光子加降滤波器与高性能光子构建块集成在芯片上,可以为波分复用构建紧凑复杂的光子集成电路。通常,实现是基于集成加热器的微环谐振器或基于自由载波色散的调制器来调整滤波器波长。然而,加热器功耗高,自由载流子导致光吸收损失,限制了向大规模电路的可扩展性。我们展示了基于垂直可移动mems驱动环形谐振器的紧凑型加降滤波器的设计、仿真、制造和实验表征。MEMS驱动的加降滤波器在IMEC的iSiPP50G硅光子平台上实现,并使用短后处理流程在晶圆级兼容工艺中安全地释放悬浮的MEMS结构。该滤波器在1557.1 nm处的通口线宽为~ 1 nm (124.37 GHz),在27 V驱动电压下,端口消光为20 dB,端口隔离为>50 dB。低功耗和紧凑的占地面积的结合证明了在光子电路中大规模集成的适用性。
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