Layered structures with delta-doped layers for enhancement of field emission

Abstract

The electron field emission from silicon tip arrays with layered structures on their surface was investigated. The main task of study were to enhance and stabilize field emission. Among different prepared layered structures were n-Si-SiO/sub 2/, n-Si-Cs-SiO/sub 2/, n-Si-SiO/sub 2/-Si-SiO/sub 2/, n-Si-Si/sub 3/N/sub 4/-Si-SiO/sub 2/, etc. The thicknesses of dielectric layers were in range 1-3 nm and they ware prepared both by thermal oxidation and by chemical vapor deposition (CVD). The cesium was deposited on the cathocodes by the application of cesium salt (CsCl) in solution. The outer SiO/sub 2/ layer defends cesium from evaporate during heating or reaction under exposure in gases. The thin silicon layer (Si) layer was formed by CVD. The measurements of electron field emission from layered structures show sufficient enhancement emission in case of using of the delta-doped cesium layer. The incorporation of cesium is important way to decrease threshold voltage of cold cathode operation and in our case using of SiO/sub 2/ lever allows to stabilize of emission. The explanation of experimental results on base of energy diagrams of layered structures has been performed. In case of structures with delta-doped layer added mechanism of tunneling, namely resonant tunneling was realized.