Selective liquid phase epitaxial growth of InP on silicon

Abstract

A fabrication technique called SLPE (selective liquid phase epitaxy) is described for growing InP films on silicon substrates. SLPE is expected to limit the propagation of dislocations in two ways: the LPE process itself terminates dislocations at the growth interface, and contact between the substrate and the growth material is limited by a selective silicon dioxide mask. Currently, this mask is composed of 5- mu m silicon dioxide strips limiting the contact area to 20- mu m strips of silicon. Single-crystal InP has been grown directly on silicon substrates. A 1-2- mu m nucleation enhancement (NE) layer is grown selectively between the silicon dioxide stripes, directly contacting the silicon substrate. The InP LPE film nucleates from this NE layer and growth proceeds vertically and laterally to overgrow the silicon dioxide mask.<>