Transport characteristics of double gate n-channel junctionless transistor

Abstract

In this work, Electrostatic and transport characteristics of symmetric double gate n-channel junctionless transistor have been investigated through numerical simulation. A 1-D self consistent analysis of coupled Schrodinger-Poisson equation has been performed. Channel mobile charge density has been obtained and studied for variations in device dimensions and biasing voltages. A simplified ballistic transport assumption has been applied to show the variations of drain current with device parameters. Finally transconductance has been extracted with respect to biasing gate voltage.