Advanced High Power Amplifier Chain for X-Band T/R-Modules based on GaN MMICs

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282797

P. Schuh, R. Leberer, H. Sledzik, M. Oppermann, B. Adelseck, H. Brugger, R. Quay, M. Mikulla, G. Weimann

引用次数: 12

Abstract

Power amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits on the bases of novel AlGaN/GaN HEMT structures. Both, driver and high power amplifiers are designed for X-band frequencies. The monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 1.6 W (32 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured. An amplifier chain circuitry, with mounted GaN DA and HPA MMICs, is designed based on a multi-layer LTCC technology

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基于GaN mmic的x波段T/ r模块先进高功率放大器链

未来有源阵列天线中用于新一代T/ r模块的功率放大器是基于新型AlGaN/GaN HEMT结构的单片集成电路实现的。驱动器和高功率放大器都是为x波段频率设计的。采用一种新颖的过孔微带技术设计、模拟和制作了单片集成电路。驱动放大器(DA)的输出功率为1.6 W (32dbm)，高功率放大器(HPA)的输出功率为20 W (43dbm)。基于多层LTCC技术，设计了一种带有GaN、DA和HPA mmic的放大器链电路

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 European Microwave Integrated Circuits Conference

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