Study of Miniaturization of a Silicon Vapor Chamber for Compact 3D Microelectronics, via a Hybrid Analytical and Finite Element Method

Yu’e Ma, M. Shirazy, Q. Struss, P. Coudrain, J. Colonna, A. Souifi, L. Fréchette, C. Gontrand
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引用次数: 1

Abstract

The interest in silicon vapor chambers (SVCs) has increased in the recent years as they have been identified as efficient cooling systems for microelectronics. They present the advantage of higher thermal conductivity and smaller form factor compared to conventional heat spreaders. This work aims to investigate the potential miniaturization of these devices, preliminary to integration on the backside of mobile device chips, located as close as possible to hotspots. While detailed numerical models of vapor chamber operation are developed, an easy modeling with low computational cost is needed for an effective parametric study.  Based on the study of the operating limits, this paper shows the thinning potential of a water filled micropillar for a device operating below 10 W and identify the corresponding vapour core height, and wick thickness.
小型三维微电子用硅气室小型化的分析与有限元混合方法研究
近年来,人们对硅气室(SVCs)的兴趣日益浓厚,因为它们已被确定为微电子的有效冷却系统。与传统的散热器相比,它们具有更高的导热性和更小的外形尺寸。这项工作旨在研究这些设备的潜在小型化,初步集成在移动设备芯片的背面,尽可能靠近热点。虽然已经建立了详细的蒸汽室运行数值模型,但为了进行有效的参数化研究,需要一个简单、计算成本低的建模方法。在研究工作极限的基础上,给出了工作在10w以下的充水微柱的减薄潜力,并确定了相应的汽芯高度和芯厚。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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