A 760 nW, 180 nm CMOS Analog Voice Activity Detection System

M. Croce, Brian W. Friend, F. Nesta, L. Crespi, P. Malcovati, A. Baschirotto
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Abstract

This paper presents a fully analog, signal-to-noise ratio (SNR) based voice-activity detection circuit, which achieves 99.5 % classification accuracy in a domestic environment in the presence of loud ambient noise, consuming 760 nW from a 1.2 V supply. The circuit exploits an energy-efficient analog implementation with continuous-time non-linear operation and fully-passive switched-capacitor processing, to minimize both the power consumption and the chip area. The VAD circuit prototype, fabricated in a 180 nm CMOS technology, occupies 0.14mm2.
一个760 nW, 180 nm CMOS模拟语音活动检测系统
本文提出了一种基于全模拟、信噪比(SNR)的语音活动检测电路,该电路在存在较大环境噪声的家庭环境中实现了99.5%的分类准确率,从1.2 V电源消耗760 nW。该电路采用节能模拟实现,具有连续时间非线性操作和全无源开关电容处理,以最大限度地减少功耗和芯片面积。VAD电路原型采用180 nm CMOS技术制造,占地0.14mm2。
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