Recent experimental results from a CMOS active pixel image sensor with photodiode and photogate pixels

Abstract

An APS test circuit including three 32 by 32 arrays with photodiode and photogate pixels has been developed using a 1.2 micrometer double-layer polysilicon double-layer metal CMOS process. The first experimental results have been published in the Aerosense conference in Orlando (April 1996). In this paper we present the latest experimental results including radiation hardness, quantum efficiency and spot scan pixel sensitivity.