Photonic DC and microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153) Pub Date : 1996-12-03 DOI:10.1109/MWP.1996.660359

H.J. Kim, S.H. Song, D.M. Kim, I. Han, J.I. Lee, K. Kang, S.H. Kim, S.S. Choi, K. Cho

引用次数: 0

Abstract

In this work, we report photonic microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET controlled by /spl lambda/=0.83 /spl mu/m optical source. With photonic controlled DC and microwave characteristics, we extracted nonlinear equivalent circuit model parameters of the fabricated MODFET, and investigated the physical mechanism of microwave performance improvement in the MODFET.

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AlGaAs/GaAs/InGaAs伪晶MODFET的光子直流和微波特性

本文报道了由/spl λ /=0.83 /spl mu/m光源控制的AlGaAs/GaAs/InGaAs伪晶MODFET的光子微波特性。利用光子控制的直流电特性和微波特性，提取了所制备MODFET的非线性等效电路模型参数，研究了MODFET微波性能改善的物理机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153)

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