A MMIC control chipset for T/R modules - A SiP approach

P.S. Vasu
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Abstract

This paper describes the design and development of S-band GaAs MMIC chipset consisting of a digital phase shifter, a digital attenuator, and a SPDT switch. The MMICs have been designed using a mature 0.5mum InGaAs pHEMT technology. To offer an attractive solution for phased array systems, the chipset has been integrated in a small form factor hermetically sealed metal package with plug and play features. The package design has been carried out in-house and reflects a System in Package (SiP) approach suited for high volume production. The integrated control component offers typically 9dB of insertion loss, a RMS phase error of 1.5 deg and a RMS attenuation error of 0.1 dB. The module features a high isolation of 55 dB between transmit and receive ports. The developed control module has been tested successfully in beam forming systems. The design of the constituent MMICs are presented in the initial sections followed by the description of the SiP module and the performance of the integrated entity.
用于T/R模块的MMIC控制芯片组-一种SiP方法
本文介绍了由数字移相器、数字衰减器和SPDT开关组成的s波段GaAs MMIC芯片组的设计与开发。mmic采用成熟的0.5 μ m InGaAs pHEMT技术设计。为了为相控阵系统提供一个有吸引力的解决方案,该芯片组集成在一个小尺寸的密封金属封装中,具有即插即用功能。封装设计是在内部进行的,反映了适合大批量生产的系统封装(SiP)方法。集成控制组件通常提供9dB的插入损耗,1.5°的RMS相位误差和0.1 dB的RMS衰减误差。该模块在发送和接收端口之间具有55 dB的高隔离度。所开发的控制模块已成功地在梁成形系统中进行了测试。在最初的部分中介绍了组成mmic的设计,然后描述了SiP模块和集成实体的性能。
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