Temperature sensors modeling for smart power ICs

K. Petrosyants, N. I. Rjabov
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引用次数: 4

Abstract

The computational model of the temperature sensors integrated on the IC chip with power transistors is developed. The 2D/3D problem of sensor placement is mathematically described by the classic heat transfer equation coupled with the equation for current density distribution. It is shown that parasitic effects of sensor current displacement and thermo-emf generation resulting from a temperature gradients (Seebeck effect) must be taken into account. For this purpose the special differential equation is introduced. The examples of point- and strip-like temperature sensors modeling for power BJTs and ICs are demonstrated.
智能电源集成电路的温度传感器建模
建立了集成在功率晶体管IC芯片上的温度传感器的计算模型。用经典的传热方程和电流密度分布方程对传感器的二维/三维布局问题进行了数学描述。结果表明,传感器电流位移的寄生效应和温度梯度引起的热电动势产生(塞贝克效应)必须考虑在内。为此,引入了一种特殊的微分方程。给出了用于功率bjt和ic的点状和条状温度传感器建模的实例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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