Simulating the electrical characteristics of a highly efficient Cs2AgBiBr6-based perovskite solar cell with NiOx hole transport layer

Abstract

Lead-free double perovskites show much potential as optoelectronic materials because they are stable and non-toxic. We have conducted a numerical simulation to investigate non-toxic and inorganic Cs2AgBiBr6 absorber based-photovoltaic (PV) device with NiOx hole transport layer (HTL). Herein, the Solar Cell Capacitance Simulator in One Dimensional (SCAPS-1D) has been used to design the cell structure of Ni/NiOx/Cs2AgBiBr6/TiO2/FTO/Al. The optimum thickness of the Cs2AgBiBr6 perovskite layer is found to be 600 nm. Varuous physical parameters of the designed cell on the PV outputs have been explored. To understand the stability of the proposed perovskite solar cell (PSC), effect of functioning temperature on the PV efficiency is also analyzed. Maximum power conversion efficiency (PCE) of 25.38% is achieved with open-circuit voltage (Voc) of 1.33V, short-circuit current (Jsc) of 21.46 mA/cm2, and fill factor (FF) of 88.53% at the optimized device configuration. Therefore, these findings will give useful guidance in the replacement of frequently used detrimental Pb-based perovskite with an environmentally safe and highly efficient inorganic PSC. This research advances the development of flexible perovskite with a simple fabrication procedure and great device performance.