Unlocking Sneak Path Analysis in Memristor Based Logic Design Styles

Abstract

Memristors or Resistive Random Access Memory (RRAM) are emerging non-volatile memory devices that can be used for both storage and computing. In this type of memory the information is stored in memory cells in the form of resistance. One of the very important challenges in memristive crossbars is the existence of Sneak Paths, which result in erroneous reading of memory cells. Most of the logic in-memory techniques have emphasized on improving the logic design perspective, but have given minor importance to the sneak path issue. In this paper we show the effect of sneak paths on crossbars of various sizes, and then try to analyze the logic design approaches like MAGIC and MAJORITY with respect to their immunity to sneak paths. Experimental result shows that with some extra overhead we can eliminate the sneak path effect in various logic design methods.