Silicon on insulator modulator structures for data rates of 40 Gb/s and above

F. Gardes, D. Thomson, G. Reed, J. Fédéli, L. O’Faolain, K. Debnath, T. Krauss, L. Lever, Z. Ikonić, R. Kelsall
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引用次数: 1

Abstract

In this work we describe carrier depletion MZI and ring modulators, cavity structures for modulation enhancement and QCSE modulators, all of which are under development as part of the UK Silicon Photonics project and the European HELIOS project.
数据速率在40gb /s以上的硅绝缘体调制器结构
在这项工作中,我们描述了载波耗尽MZI和环形调制器,调制增强的腔结构和QCSE调制器,所有这些都是作为英国硅光子学项目和欧洲HELIOS项目的一部分正在开发中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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