{"title":"A 25mA CMOS LDO with −85dB PSRR at 2.5MHz","authors":"Jianping Guo, K. Leung","doi":"10.1109/ASSCC.2013.6691062","DOIUrl":null,"url":null,"abstract":"A CMOS low-dropout regulator (LDO) with high power-supply rejection ratio (PSRR) achieved by the proposed supply ripple feed-forward path is presented in this paper. The LDO is simple with two additional low-pass filters included. No extra power is consumed when comparing to the traditional design. The proposed LDO is implemented in 0.18-μ m CMOS technology. It occupies active area of 0.042 mm2. With the proposed embedded supply ripple feed-forward path, in the maximum loading of 25 mA, it achieves PSRR of -85 dB at 2.5 MHz and PSRR better than -55 dB when frequency is below 5 MHz with a 4.7-μF output capacitor. The measured quiescent current is 15 μA only. The overshoot and undershoot voltages are less than 40 mV when loading changes between 1 mA and 25 mA within 40 ns. The LDO achieves line and load regulations of 3 mV/V and 50 μV/mA, respectively.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6691062","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
Abstract
A CMOS low-dropout regulator (LDO) with high power-supply rejection ratio (PSRR) achieved by the proposed supply ripple feed-forward path is presented in this paper. The LDO is simple with two additional low-pass filters included. No extra power is consumed when comparing to the traditional design. The proposed LDO is implemented in 0.18-μ m CMOS technology. It occupies active area of 0.042 mm2. With the proposed embedded supply ripple feed-forward path, in the maximum loading of 25 mA, it achieves PSRR of -85 dB at 2.5 MHz and PSRR better than -55 dB when frequency is below 5 MHz with a 4.7-μF output capacitor. The measured quiescent current is 15 μA only. The overshoot and undershoot voltages are less than 40 mV when loading changes between 1 mA and 25 mA within 40 ns. The LDO achieves line and load regulations of 3 mV/V and 50 μV/mA, respectively.