Characterization of patterned low-k film delamination during CMP for the 32nm node Cu/ultra low-k (k=1.6-1.8) integration

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345761

B. Yoo, S. Kondo, S. Tokitoh, A. Namiki, K. Misawa, K. Inukai, N. Ohashi, N. Kobayashi

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引用次数: 6

Abstract

Pattern dependence of ultra low-k (ULK, k=1.6-1.8) film delamination during Cu-CMP has been investigated to integrate the 32 nm node Cu/ULK damascene interconnects. A CMP mask that has various kinds of dummy-patterns was developed for quantitative characterization of the ULK film delamination. As a result, the perimeter of the pattern, which is the length along the boundary between Cu and low-k film, was found to be a determinative parameter in delamination of the patterned low-k film rather than pattern density. This is because Cu interconnects with higher-density perimeter increase the tolerance to shear stress generated by the CMP, and thus prevent the delamination due to the low mechanical strength of the ULK film (modulus; E<2GPa). A soft pad polishing was also effective in suppressing the mechanical damage. On the basis of these results, Cu damascene interconnects with ULK film were successfully integrated on 300mm wafers.

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32nm节点Cu/超低k (k=1.6-1.8)集成CMP过程中图案化低k薄膜分层的表征

研究了Cu- cmp过程中超低k (ULK, k=1.6-1.8)薄膜分层的模式依赖关系，以集成32 nm节点Cu/ULK damascene互连。开发了一种具有多种假图案的CMP掩膜，用于定量表征ULK薄膜分层。结果发现，图案的周长，即沿Cu和低k薄膜边界的长度，是图案低k薄膜分层的决定性参数，而不是图案密度。这是因为具有高密度周长的Cu互连增加了CMP产生的剪切应力的容错性，从而防止了由于ULK膜的低机械强度(模量;E < 2 gpa)。软垫抛光在抑制机械损伤方面也很有效。在此基础上，成功地在300mm晶圆上集成了含有ULK薄膜的Cu damascene互连。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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