The Indium-Gallium-Tin-Oxide thin film transistor with better performance based on the solution procession

Abstract

We newly prepared indium-gallium-tin-oxide (In-Ga-Sn-O) thin film by solution process for TFT active layer. The spin-coated IGTO film exhibits an excellent transparency that is over 90% at the spectral range from 290nm to 800nm. The saturation filed effect mobility of bottle-gate and top-contact IGTO TFT can be increased from 10 cm2/Vs to 13 cm2/Vs by adjusting the elements ratio of In and Sn. The ΔVTH was 0.8V and -1.8V respectively under positive gate bias stressing (PGBS) and negative gate bias stressing (NGBS) with stress time for 3600s. The spin-coated IGTO film pre-heated in water vapor performed more stable in gate voltage forth-back scanning and obtained higher on-current than those not preheated by water vapor. In addition, the short channel device has better performance in our study. By comparison, solution-process based IGTO TFT performs better than many IGZO TFTs. The results may provide a new choice for oxide-based TFTs, displays and transparent electronics.