Selective regrowth of InGaAs/InP MQWs on SOI for telecom band emission

Abstract

We demonstrated selective regrowth of InGaAs/InP multi-quantum wells (MQWs) on silicon-on-insulator (SOI) wafers for telecom band emission. The MQWs growth was guided by regrowth templates fabricated on a monolithic InP/SOI platform. Flat (001) III-V surface with a roughness of 0.381 nm, QWs with strong photoluminescence (PL) emission at 1.55 $\mu$m, and narrow full-width-at-half-maximum (FWHM) of 73 meV were achieved.