Properties of InP grown by migration-enhanced epitaxy using polycrystalline InP as phosphorus source

Abstract

The authors discuss the crystalline quality and electrical properties of InP grown by the migration-enhanced epitaxy (MEE) mode (Y. Horikoshi et al., 1986). InP layers were characterized by reflection high-energy electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, photoluminescence, and Hall measurements. Electrical properties which are strongly dependent on growth temperature are explained in terms of the impurity conduction through the residual stoichiometry-related donor defects. A conventional molecular beam epitaxy (MBE) growth was also made for comparison.<>