Ammonia gas sensing properties of Cr2O3 activated ZrO2 thick film resistors

S. Deshmukh, G. Patil, R. H. Bari, G. Jain
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引用次数: 1

Abstract

ZrO2 thick films were prepared by standard screen printing technique. Pure ZrO2 films were activated with Cr3+ by dipping them into an aqueous solution (0.1 M) of chromium trioxide CrO3 for different interval of time 5, 10, 20, 30 minutes and fired at 550°C for 30 min. The CrO3 is known to be unstable above 197°C and transform into Cr2O3 upon firing above 197°C. The grain of Cr2O3 would disperse around the grains of ZrO2 base material. The films were characterized by XRD, SEM, EDAS, UV techniques. The gas sensing performance of different target gases was tested and the chromium activated films dipped in 10 Min. was observed to be sensitive. And highly selective 1000ppm of NH3 gas at operating temperature 300°C. The elemental composition were discussed and effect of Cr3+ concentration on sensitivity, selectivity, response and recovery time of the sensor in the presence of different gases were studied. Reaction mechanism were discussed with better performance could attributed to an optimum number of surface misfrits in terms of Cr2O3 on the ZrO2 films. It was first time observed that crominated surface modified film have reduction in bandwidth and observed activation energy were reported.
Cr2O3活化ZrO2厚膜电阻器的氨气敏性能
采用标准丝网印刷技术制备了ZrO2厚膜。将纯ZrO2膜浸入0.1 M的三氧化铬CrO3水溶液中,分别浸泡5、10、20、30分钟,并在550℃下烧制30分钟,用Cr3+活化ZrO2膜。已知在197℃以上,CrO3是不稳定的,在197℃以上烧制时转化为Cr2O3。Cr2O3晶粒会分散在ZrO2基体晶粒周围。采用XRD、SEM、EDAS、UV等技术对膜进行了表征。对不同目标气体的气敏性能进行了测试,并观察到铬活化膜浸10 min后的气敏性能。高选择性1000ppm NH3气体,工作温度300℃。讨论了传感器的元素组成,研究了不同气体存在下Cr3+浓度对传感器灵敏度、选择性、响应和恢复时间的影响。并对反应机理进行了讨论,认为ZrO2膜上Cr2O3的最佳表面杂块数是提高反应性能的主要原因。首次观察到溴化表面改性膜的带宽降低,并观察到活化能。
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