Effect of Repetitive Short-Circuit Stress on dynRdson of p-GaN HEMT

Abstract

The paper presents part of results of double-pulse switching tests and extraction of dynamic on-resistance of packaged normally-off GaN HEMTs. Devices were tested under various switching conditions. Effects of the switching parameters on dynamic on-resistance were analysed and compared. Samples were exposed to repetitive SC stress for several thousand repetitions of switching. Shift of on-resistance due to short-circuit stress was observed, but not of significant magnitude.