Advanced 200-mm RF SOI Technology exhibiting $78\ \text{fs}\ \mathrm{R}_{\text{ON}}\times \mathrm{C}_{\text{OFF}}$ and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM

2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI:10.1109/RFIC54546.2022.9863082

F. Gianesello, A. Fleury, F. Julien, J. Durá, S. Monfray, S. Dhar, C. Legrand, J. Amouroux, B. Gros, L. Welter, C. Charbuillet, P. Cathelin, E. Canderle, N. Vulliet, E. Escolier, L. Antunes, E. Granger, P. Fornara, C. Rivero, G. Bertrand, P. Chevalier, A. Régnier, D. Gloria

{"title":"Advanced 200-mm RF SOI Technology exhibiting $78\\ \\text{fs}\\ \\mathrm{R}_{\\text{ON}}\\times \\mathrm{C}_{\\text{OFF}}$ and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM","authors":"F. Gianesello, A. Fleury, F. Julien, J. Durá, S. Monfray, S. Dhar, C. Legrand, J. Amouroux, B. Gros, L. Welter, C. Charbuillet, P. Cathelin, E. Canderle, N. Vulliet, E. Escolier, L. Antunes, E. Granger, P. Fornara, C. Rivero, G. Bertrand, P. Chevalier, A. Régnier, D. Gloria","doi":"10.1109/RFIC54546.2022.9863082","DOIUrl":null,"url":null,"abstract":"RF Front End Modules (FEMs) are currently achieved using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, CMOS Silicon-on-insulator (SOI) has been adopted 10 years ago and is now the dominant technology for RF switches in RF FEMs for cell phones and WiFi [1]. While current performances available on RF SOI technology have been exceeding what was feasible using GaAs one, new cellular system requirements ask even more stringent performances and consequently RF SOI technology must continue to improve. In this paper, we review and discuss the optimization of an advanced 200 mm RF SOI technology achieving $R_{\\text{ON}}\\times C_{\\text{OFF}}$ of 78 fs with a breakdown voltage of 3.7 V.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC54546.2022.9863082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

RF Front End Modules (FEMs) are currently achieved using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, CMOS Silicon-on-insulator (SOI) has been adopted 10 years ago and is now the dominant technology for RF switches in RF FEMs for cell phones and WiFi [1]. While current performances available on RF SOI technology have been exceeding what was feasible using GaAs one, new cellular system requirements ask even more stringent performances and consequently RF SOI technology must continue to improve. In this paper, we review and discuss the optimization of an advanced 200 mm RF SOI technology achieving $R_{\text{ON}}\times C_{\text{OFF}}$ of 78 fs with a breakdown voltage of 3.7 V.

查看原文本刊更多论文

先进的200毫米射频SOI技术，显示$78\ \text{fs}\ \ mathm {R}_ \text{ON}}\times \ mathm {C}_{\text{OFF}}$和3.7 V击穿电压，针对低于6 GHz的5G FEM

射频前端模块(fem)目前使用多种技术实现。然而，由于集成驱动无线业务以实现适当的成本和外形因素，CMOS绝缘体上硅(SOI)在10年前就被采用，现在是手机和WiFi射频fem中射频开关的主导技术[1]。虽然目前射频SOI技术的可用性能已经超过了使用GaAs技术的可行性，但新的蜂窝系统要求更严格的性能，因此射频SOI技术必须继续改进。在本文中，我们回顾和讨论了一种先进的200mm射频SOI技术的优化，该技术在3.7 V击穿电压下实现了78 fs的R_{\text{ON}}\次C_{\text{OFF}}$。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

自引率

0.00%

发文量