Ting Wu, Jingquan Liu, Shui-Dong Jiang, Bin Xu, Bin Yang, Hongying Zhu, Chunsheng Yang
{"title":"Electrical properties of micro-heaters using sputtered NiCr thin film","authors":"Ting Wu, Jingquan Liu, Shui-Dong Jiang, Bin Xu, Bin Yang, Hongying Zhu, Chunsheng Yang","doi":"10.1109/NEMS.2013.6559771","DOIUrl":null,"url":null,"abstract":"NiCr (80/20 at.%) thin films were deposited on SiO2/Si substrates as a cryonetic heater by DC magnetron sputtering technique. After a series of annealing treatments under various conditions, the electrical properties and microstructure of the films were investigated. The crystallinity and composition of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The films are changed from crystalline to amorphous phase after annealing at 250°C in nitrogen ambient and the annealing conditions have a significant effect on the resistivity and temperature coefficient of resistance (TCR) of the films. TCR of the samples annealed at 250°C for 9 minutes in N2 shows 9.23 ppm/K at 20K which is finally confirmed as the optimal result.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2013.6559771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
NiCr (80/20 at.%) thin films were deposited on SiO2/Si substrates as a cryonetic heater by DC magnetron sputtering technique. After a series of annealing treatments under various conditions, the electrical properties and microstructure of the films were investigated. The crystallinity and composition of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The films are changed from crystalline to amorphous phase after annealing at 250°C in nitrogen ambient and the annealing conditions have a significant effect on the resistivity and temperature coefficient of resistance (TCR) of the films. TCR of the samples annealed at 250°C for 9 minutes in N2 shows 9.23 ppm/K at 20K which is finally confirmed as the optimal result.